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991.
The effects of B4C content on the specific stiffness and mechanical and thermal properties of pressureless-sintered SiC ceramics were investigated. SiC ceramics containing 2.5 wt% C and 0.7–20 wt% B4C as sintering aids could be sintered to ≥ 99.4% of the theoretical density at 2150 °C for 1 h in Ar. The specific stiffness of SiC ceramics increased from 136.1 × 106 to 144.4 × 106 m2‧s−2 when the B4C content was increased from 0.7 to 20 wt%. The flexural strength and fracture toughness of the SiC ceramics were maximal with the incorporation of 10 wt% B4C (558 MPa and 3.69 MPa‧m1/2, respectively), while the thermal conductivity decreased from ∼154 to ∼83 W‧m−1‧K−1 when the B4C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 20 wt% B4C were ∼346 MPa and ∼105 W‧m−1‧K−1, respectively.  相似文献   
992.
SiC ceramic was fabricated by spark plasma sintering of β-SiC powder and Y2O3-MgO additives in argon. The effects of β→α phase transformation of SiC on microstructure and thermal conductivity of densified bulks were systematically investigated, in comparison to the counterparts using α-SiC as starting powder. The β→α phase transformation led to a “unimodal to bimodal” transition in grain size distribution. After sintering at 1850 oC, the incomplete β→α phase transformation induced the appearance of β/α heterophase boundary with strong effect of phonon-scattering. After sintering at 2050 oC, the completion of β→α phase transformation resulted in enlarged grains and disappearance of β/α heterophase boundary in SiC ceramic. The lattice oxygen content was decreased primarily by enhanced grain growth and oxygen picking-up of sintering additives, and possibly some contribution from β→α phase transformation. The optimized microstructure enabled SiC ceramic to obtain a remarkable increase in thermal conductivity from 126 to 204 W/mK after the replacement of α-SiC by β-SiC as starting powder and the accomplishment of β→α phase transformation.  相似文献   
993.
氮化硅陶瓷作为先进陶瓷材料具有耐高温、抗腐蚀等优异性能,因此被广泛应用于航空航天领域的强热冲击环境。热压烧结制备的Si3N4复合材料的抗弯强度较高,但抗热震性能随温度升高显著降低,热压烧结工艺在提升抗热震性能方面尚有不足。本文提出了使用二次热处理烧结方式来提高Si3N4陶瓷的抗热震性能,通过热压烧结-气压烧结二次热处理的烧结方式获得更致密、抗热震性能更好的Si3N4陶瓷材料。测试结果显示,常规热压方式制备的氮化硅陶瓷,随着热震温度的升高、次数的增加,材料内部产生微裂纹的概率增大,热震后试样抗弯强度逐渐降低,1200℃时平均强度下降率达23.48%。而经过二次热处理后氮化硅陶瓷抗弯强度略有降低,但抗热震性能得到明显改善,随着热处理时间增加,二次热处理后氮化硅陶瓷显微结构更加致密,抗热震性能将明显提高,热震后强度下降率明显减小,1200℃热震10次后强度下降率为12.25%。本文提出了提高Si3N4陶瓷的抗热震性的方法,探讨了氮化硅陶瓷在1200℃高温下的抗热震性能及其衰减规律,为改善氮化硅陶瓷器件高温性能提供了参考。  相似文献   
994.
BN-nanoparticle-containing SiC-matrix-based composites comprising SiC fibers and lacking a fiber/matrix interface (SiC/BN + SiC composites) were fabricated by spark plasma sintering (SPS) at 1800°C for 10 min under 50 MPa in Ar. The content of added BN nanoparticles was varied from 0 to 50 vol.%. The mechanical properties of the SiC/BN + SiC composites were investigated thoroughly. The SiC/BN + SiC composites with a BN nanoparticle content of 50 vol.%, which had a bulk density of 2.73 g/cm3 and an open porosity of 5.8%, exhibited quasiductile fracture behavior, as indicated by a short nonlinear region and significantly shorter fiber pullouts owing to the relatively high modulus. The composites also exhibited high strength as well as bending, proportional limit stress, and ultimate tensile strength values of 496 ± 13, 251 ± 30, and 301 MPa ± 56 MPa, respectively, under ambient conditions. The SiC fibers with contents of BN nanoparticles above 30 vol.% were not severely damaged during SPS and adhered to the matrix to form a relatively weak fiber/matrix interface.  相似文献   
995.
A comparative analysis of the tribological behavior of commercially available sintered silicon carbide (SiC) and three different types of silicon nitride (Si3N4) ceramics have been carried out using the ball-on-disk method in dry and lubrication (deionized [DI] water and ethanol) environment. Scanning electron microscopy (SEM) was used to understand the morphology and chemical composition of the tribo-surfaces. Sintered SiC (Hexoloy-SA) had the highest friction coefficient during dry sliding with an average of ∼0.34. Deionized water showed a minor improvement in friction (∼0.27) while ethanol reduced the friction greatly to ∼0.18 compared to dry sliding. During dry sliding, the presence of an abrasive third body was responsible for the high wear rates (WRs) in these compositions. Hexoloy-SA showed a lower WR during ethanol and DI water lubrication due to the formation of stable tribofilms as well as higher hardness which resisted the formation of third bodies. In comparison, Si3N4 samples showed a lower WR in DI water and ethanol. The samples also showed composition-dependent behavior which indicates that grain structure and grain boundary chemistry are playing a vital role in the tribological process.  相似文献   
996.
In this paper, the novel boron nitride micron tubes (BNMTs) were used to reinforce commercial boron carbide (B4C) ceramics prepared via spark plasma sintering technology. The effects of the sintering parameters, sintering temperature, the holding time, and the BNMTs content on the microstructure and mechanical properties of B4C/BNMTs composite ceramics were studied. The results indicated that adding a proper amount of BNMTs could inhibit the grain growth of B4C and improve the fracture toughness of the B4C/BNMTs composite ceramics. The prepared composite ceramic sample with 5 wt% BNMTs at 1850°C, 8 min and 30 MPa displayed the best mechanical properties. The relative density, hardness, fracture toughness, and bending strength of the samples were 99.7% ± .1%, 35.62 ± .43 GPa, 6.23 ± .2 MPa m1/2, and 517 ± 7.8 MPa, respectively. Therein, the corresponding value of hardness, fracture toughness, and bending strength was increased by 10.3%, 43.59%, and 61.5%, respectively, than that of the B4C/BNMTs composite ceramic without BNMTs. It was proved that the high interface binding energy and bridging effect between boron carbide and BNMTs were the toughening principle of BNMTs.  相似文献   
997.
In this study, NiTi–x wt.% B4C (x = 0, 2, and 4) composites were consolidated with spark plasma sintering method, and the effects of boron carbide reinforcement addition on the microstructure and wear behavior of samples were investigated. Identification of the constituent phases of samples by the X-ray diffraction method plus Rietveld analysis revealed that the stability of the martensite phase increased in the composite samples because of mismatch stresses between the NiTi matrix phase and the reinforcing particles, which increases the density of the dislocations and facilitates the diffusion process that subsequently leads to the formation of stable intermetallics. The results of hardness test indicated that the hardness value increased from 3.67 GPa for pure NiTi to 10.99 GPa for NiTi–4 wt.% B4C. Results of wear test revealed that boron carbide reinforced composite specimens had higher wear resistance, whereas wear rate of NiTi sample was 3.6 × 10−3 mm3/N m, and it reached to .21 × 10−3 mm3/N m for NiTi–4 wt.% B4C. Investigation of microstructure by scanning electron microscopy images and EDS analysis revealed that the wear mechanism in NiTi samples was abrasive and the addition of B4C to NiTi changed the wear mechanisms from abrasive to a combination of oxidation, adhesive, and delamination mechanisms.  相似文献   
998.
杨丽 《染整技术》2007,29(11):39-41
对用分光光度法测定无机阻燃粘胶纤维中硅的含量进行了探讨。通过其中硅含量的变化,分析了无机阻燃粘胶纤维纺纱、织造及化学加工过程对其阻燃性能的影响。结果表明,无机阻燃粘胶纤维的阻燃性能受酸、碱以及高温的影响比较大,其中碱的影响比较大,随着碱浓度的升高,硅的含量下降。而还原剂与盐的影响相对较弱。总而言之,无机阻燃粘胶纤维中硅的含量随着加工过程的进行而降低,其阻燃性能呈现下降趋势。  相似文献   
999.
We have developed a novel MOSFET that can transfer signals vertically without through‐silicon vias but by using a fully depleted silicon‐on‐insulator (FDSOI) structure with its source region connected to the back electrodes as well as the front ones. A prototype MOSFET fabricated using the backside anisotropic wet etching technique has confirmed that the electrical characteristics measured from the front and the back electrodes are identical. The subthreshold factor S of the prototype was found to be 64.5 mV/decade, suggesting a good switching performance. Since the double‐sided MOSFET has vertical signal‐transfer capability and excellent operating characteristics, it is expected to contribute to developing a More‐than‐Moore type device of three‐dimensional integration such as pixel‐parallel image sensors. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.  相似文献   
1000.
We present a rigorously derived current solution for undoped double‐gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third‐order Newton–Raphson (NR) method is used to solve the surface‐potential equations resulting from the application of the boundary conditions to the general Poisson solution, with an initial guess very close to the true solution. The results demonstrate surface‐potential solutions for DG MOSFETs with 2–7 iterations to achieve an accuracy of 10−15. The drain current model for two carriers is presented as a benchmark to test the accuracy of one‐carrier current approximation. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.  相似文献   
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